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STACKING DEFECT AND ELECTRONIC STRUCTURE OF ALLOYS We have used the Tight-Binding formalism, within the continued fraction technique, in order to study the stacking defect fcc vs hc as a…
SURFACE AND ADSORBATE NANOSTRUCTURATION Most of the substrates used by the DSI’s experimental research teams consists of nanostructured substrates, i. e. reconstructured surfaces or vicinal ones. In this framework, DSI’s…
DIFFUSION, NUCLEATION AND GROWTH A second important part of the work of the DSI’s computational team focuses on the growth mechanims of supported nanostructures. Atomic diffusion, nucleation processes and cluster…
Institut de Physique et de Chimie des Matériaux de Strasbourg
