Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions Appl. Phys. Lett. 92, 212115 (2008) ; doi:10.1063/1.2938696 D. Halley, H. Majjad, M. Bowen, N. Najjari, Y. Henry, C. Ulhaq-Bouillet, W. Weber, G. Bertoni, J. Verbeeck, and G. Van Tendeloo
Electrical switching in Fe/Cr/MgO/Fe magnetic tunnel junctions
Hysteretic resistance switching is observed in epitaxial Fe/Cr/MgO/Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1 V. The junctions switch back and forth between high- and low-resistance states, both of which depend on the device bias history. A linear dependence is found between the magnitude of the tunnel magnetoresistance and the crafted resistance of the junctions. To explain these results, a model is proposed that considers electron transport both by elastic tunneling and by defect-assisted transmission.
Collaboration with : Fondazione Istituto Italiano di Tecnologia (IIT), Via Morego 30, IT-16163 Genoa, Italy EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium