Spin-based memory and logic devices hold the promise to overcome the power, performance and architectural bottlenecks of CMOS-based devices. Among potential material candidates, graphene carries great expectations due to its unique lateral electronic transport properties, together with predicted high spin filtering effects at the interface between few layers graphene and crystalline ferromagnetic electrode ((111) fcc Ni or Co mainly).
In order to exploit these properties, it is mandatory to develop strategies allowing epitaxial growth of ferromagnetic electrodes and tunneling barrier (MgO, AlOx..). Our aim is to explore the unique spin filtering and spin transport properties of graphene by developing nano and micro scale devices with high quality epitaxial magnetic electrodes.
This work is developed in close concert with D. Halley and Y. Henry (IPCMS/DMONS).
More information :
Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene.
F. Godel, E. Pichonat, D.Vignaud, H. Majjad, D.Metten, Y. Henry, S.Berciaud, J.F.Dayen and D. Halley. Nanotechnology, 24, 475708 (2013)