Chemical process (wet etching) and/or oxygen plasma (dry etching) can be used to clean organic residues off substrates before or after lithography step.
The standard process to clean organic residues off substrates is:
- Acetone (5-10 minutes, sonification if possible)
- Ethanol or Isopropyl alcohol (5-10 minutes)
- Nitrogen gun drying
These operations should be done only under the solvent fume hood (stainless steel).
This mixture is also really efficient for mask cleaning (to remove resist residues after lithography)
Rem : please ask a STnano staff member if you need this process.